btw 68 (n) march 1995 scr symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) btw 68 btw 68 n tc=80 c tc=85 c 30 35 a i t(av) average on-state current (180 conduction angle,single phase circuit) btw 68 btw 68 n tc=80 c tc=85 c 19 22 a i tsm non repetitive surge peak on-state current ( tj initial = 25 c) tp=8.3 ms 420 a tp=10 ms 400 i 2 ti 2 t value tp=10 ms 800 a 2 s di/dt critical rate of rise of on-state current gate supply : i g = 100 ma di g /dt = 1 a/ m s 100 a/ m s tstg tj storage and operating junction temperature range - 40 to + 150 - 40 to + 125 c c tl maximum lead temperature for soldering during 10 s at 4.5 mm from case 230 c top 3 (plastic) k a g . high surge capability . high on-state current . high stability and reliability . btw 68 serie : insulated voltage = 2500v (rms) (ul recognized : e81734) description symbol parameter btw 68 btw 68 / btw 68 n unit 200 400 600 800 1000 1200 v drm v rrm repetitive peak off-state voltage tj = 125 c 200 400 600 800 1000 1200 v absolute ratings (limiting values) features the btw 68 (n) family of silicon controlled recti- fiers uses a high performance glass passivated technology. this general purpose family of silicon controlled rectifiers is designed for power supplies up to 400hz on resistive or inductive load. 1/5
gate characteristics (maximum values) symbol parameter value unit rth (j-a) junction to ambient 50 c/w rth (j-c) dc junction to case for dc btw 68 1.1 c/w btw 68 n 0.8 symbol test conditions value unit btw 68 btw 68 n i gt v d =12v (dc) r l =33 w tj=25 c max 50 ma v gt v d =12v (dc) r l =33 w tj=25 c max 1.5 v v gd v d =v drm r l =3.3k w tj= 125 c min 0.2 v tgt v d =v drm i g = 200ma di g /dt = 1.5a/ m s tj=25 c typ 2 m s i l i g = 1.2 i gt tj=25 c typ 40 ma i h i t = 500ma gate open tj=25 c max 75 ma v tm btw 68 itm= 60a btw 68 n i tm = 70a tp= 380 m s tj=25 c max 2.1 2.2 v i drm i rrm v drm rated v rrm rated tj=25 c max 0.02 ma tj= 125 c6 dv/dt linear slope up to v d =67%v drm gate open v drm 800v v drm 1000v tj= 125 c min 500 250 v/ m s tq v d =67%v drm i tm = 60a v r = 75v di tm /dt=30 a/ m sdv d /dt= 20v/ m s tj= 125 c typ 100 m s p g (av) =1w p gm = 40w (tp = 20 m s) i fgm = 8a (tp = 20 m s) v rgm =5v. electrical characteristics thermal resistances btw 68 (n) 2/5
fig.3 : maximum average power dissipation versus average on-state current (btw 68 n). fig.4 : correlation between maximum average power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (btw 68 n). fig.1 : maximum average power dissipation versus average on-state current (btw 68). fig.2 : correlation between maximum average power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (btw 68). package i t(rms) v drm /v rrm sensitivity specification a v btw btw 68 (insulated) 30 200 x 400 x 600 x 800 x 1000 x 1200 x btw 68 n (uninsulated) 35 600 x 800 x 1000 x 1200 x btw 68 (n) 3/5
fig.8 : relative variation of gate trigger current versus junction temperature. fig.9 : non repetitive surge peak on-state current versus number of cycles. fig.5 : average on-state current versus case temperature (btw 68). 1e-3 1e-2 1e-1 1e +0 1 e+1 1 e+2 1 e +3 0.01 0.10 1.00 zth/rth zth( j-c) zt h( j-a) tp(s) fig.7 : relative variation of thermal impedance versus pulse duration. fig.6 : average on-state current versus case temperature (btw 68 n). fig.10 : non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10 ms, and corresponding value of i 2 t. btw 68 (n) 4/5
cooling method : c marking : type number weight : 4.7 g recommended torque value : 0.8 m.n. maximum torque value : 1 m.n. fig11 : on-state characteristics (maximum values). h r4.6 c a g d b p nn l m j i ref. dimensions millimeters inches min. max. min. max. a 15.10 15.50 0.594 0.611 b 20.70 21.10 0.814 0.831 c 14.30 15.60 0.561 0.615 d 16.10 16.50 0.632 0.650 g 3.40 - 0.133 - h 4.40 4.60 0.173 0.182 i 4.08 4.17 0.161 0.164 j 1.45 1.55 0.057 0.062 l 0.50 0.70 0.019 0.028 m 2.70 2.90 0.106 0.115 n 5.40 5.65 0.212 0.223 p 1.20 1.40 0.047 0.056 package mechanical data top 3 plastic information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-t homson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the nether- lands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. btw 68 (n) 5/5
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